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Current issue

ELEKTRO 1/2019 was released on January 16th 2019. Its digital version will be available on February 12th 2019.

Topic: Electrotechnology; Materials for electrical engineering; Wiring material

Main Article
Electrically conductive adhesives for electrical engineering
Smart Cities (part 6)

SVĚTLO (Light) 6/2018 was released on December 3rd 2018. Its digital version will be available on January 4th 2019.

Luminaires and light apparatuses
Modular floodlights Siteco
Decorative luminaire PRESBETON H-E-X from the integral series town equipment
LED luminaires ESALITE – revolution in sphere of industrial lighting

Daylight
About median illumination by daylight
Professional colloquium Daylight in practice

Engineers produce smallest 3-D transistor yet

10.12.2018 | MIT | www.mit.edu

Researchers from MIT and the University of Colorado have fabricated a 3-D transistor that’s less than half the size of today’s smallest commercial models. To do so, they developed a novel microfabrication technique that modifies semiconductor material atom by atom.

The inspiration behind the work was to keep up with Moore’s Law, an observation made in the 1960s that the number of transistors on an integrated circuit doubles about every two years. To adhere to this “golden rule” of electronics, researchers are constantly finding ways to cram as many transistors as possible onto microchips. The newest trend is 3-D transistors that stand vertically, like fins, and measure about 7 nanometers across — tens of thousands of times thinner than a human hair. Tens of billions of these transistors can fit on a single microchip, which is about the size of a fingernail.

3D transistors

As described in a paper presented at this week’s IEEE International Electron Devices Meeting, the researchers modified a recently invented chemical-etching technique, called thermal atomic level etching (thermal ALE), to enable precision modification of semiconductor materials at the atomic level. Using that technique, the researchers fabricated 3-D transistors that are as narrow as 2.5 nanometers and more efficient than their commercial counterparts.

Read more at MIT

Image Credit: MIT

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