We Continue the Work of Those
Who Were the First.

  • Electrical Engineering
  • Light & Lighting
  • Power Engineering
  • Transportation
  • Automation
  • Communication
  • Smart Buildings
  • Industry
  • Innovation

Current issue

ELEKTRO 5/2017 was released on May 11th 2017. Its digital version will be available on June 6th 2017.

Topic: Lightning and overvoltage protection; 23rd ELO SYS 2017

Main Article

Vibrations of rotary machines with magnetic bearings

SVĚTLO (Light) 2/2017 was released on March 17th 2017. Its digital version will be available immediately.

Fair and exhibitions
Inspired lighting from foreign fairs 

Accessories of lighting installations
On lighting operation is possible to save with minimum investments
Maxos fusion – new Philips Quit assembling system
Inteligent solution Dalisys® for control lighting

Researchers Develop Fastest and Most Flexible Silicon Phototransistor Ever

06.11.2015 | UW-Madison | news.wisc.edu

Inspired by mammals' eyes, University of Wisconsin-Madison electrical engineers have created the fastest, most responsive flexible silicon phototransistor ever made.

The innovative phototransistor could improve the performance of myriad products - ranging from digital cameras, night-vision goggles and smoke detectors to surveillance systems and satellites - that rely on electronic light sensors. Integrated into a digital camera lens, for example, it could reduce bulkiness and boost both the acquisition speed and quality of video or still photos.

The most flexible phototransistor

Developed by UW-Madison collaborators Zhenqiang Ma, professor of electrical and computer engineering, and research scientist Jung-Hun Seo, the high-performance phototransistor far and away exceeds all previous flexible phototransistor parameters, including sensitivity and response time.

One important aspect of the success of the new phototransistors is the researchers' innovative “flip-transfer” fabrication method, in which their final step is to invert the finished phototransistor onto a plastic substrate. At that point, a reflective metal layer is on the bottom. “In this structure - unlike other photodetectors - light absorption in an ultrathin silicon layer can be much more efficient because light is not blocked by any metal layers or other materials,” Ma says.

Read more at UW-Madison

Image Credit: UW-Madison

-jk-