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Current issue

ELEKTRO 8-9/2017 was released on September 5th 2017. Its digital version will be available on September 5th 2017.

Topic: 59th International engineering fair in Brno; Electrical engineering in industry

Main Article
Fuel cells
Renaissance of synchronous reluctance motors
Actuator design working with electromagnetic field

SVĚTLO (Light) 5/2017 was released on September 18th 2017. Its digital version will be available on September 18th 2017.

Luminaires and luminous apparatuses
MAYBE STYLE introducing LED design luminaires of German producer Lightnet
TREVOS – new luminaires for industry and offices
How many types of LED panels produces MODUS?
Intelligent LED luminaire RENO PROFI

Interiors lighting
The light in indoor flat interior – questions and answers

Researchers Develop Fastest and Most Flexible Silicon Phototransistor Ever

06.11.2015 | UW-Madison | news.wisc.edu

Inspired by mammals' eyes, University of Wisconsin-Madison electrical engineers have created the fastest, most responsive flexible silicon phototransistor ever made.

The innovative phototransistor could improve the performance of myriad products - ranging from digital cameras, night-vision goggles and smoke detectors to surveillance systems and satellites - that rely on electronic light sensors. Integrated into a digital camera lens, for example, it could reduce bulkiness and boost both the acquisition speed and quality of video or still photos.

The most flexible phototransistor

Developed by UW-Madison collaborators Zhenqiang Ma, professor of electrical and computer engineering, and research scientist Jung-Hun Seo, the high-performance phototransistor far and away exceeds all previous flexible phototransistor parameters, including sensitivity and response time.

One important aspect of the success of the new phototransistors is the researchers' innovative “flip-transfer” fabrication method, in which their final step is to invert the finished phototransistor onto a plastic substrate. At that point, a reflective metal layer is on the bottom. “In this structure - unlike other photodetectors - light absorption in an ultrathin silicon layer can be much more efficient because light is not blocked by any metal layers or other materials,” Ma says.

Read more at UW-Madison

Image Credit: UW-Madison

-jk-