We Continue the Work of Those
Who Were the First.

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Current issue

ELEKTRO 7/2018 was released on June 27th 2018. Its digital version will be available on July 27th 2018.

Topic: Cables, conductors and cable engineering; Tools, equipment and accessories for work with cables

Main Article
Parametrization of circuit models of Li-accumulators for electromobility
Smart Cities (part 3 – volume 1)

SVĚTLO (Light) 4/2018 was released on July 30th 2018. Its digital version will be available on August 31th 2018.

Refreshing our memory
Eccentric luminaires of René Roubíček from the years1965 till 1977
Bases of photometry – 1st part
Great personage of Czech science of times after Battle at Bílá hora: doctor, naturalist, philosopher and physicist Jan Marek Marci from Kronland

Optical radiation effects and use
The light and circadian rhythms

Researchers Develop Fastest and Most Flexible Silicon Phototransistor Ever

06.11.2015 | UW-Madison | news.wisc.edu

Inspired by mammals' eyes, University of Wisconsin-Madison electrical engineers have created the fastest, most responsive flexible silicon phototransistor ever made.

The innovative phototransistor could improve the performance of myriad products - ranging from digital cameras, night-vision goggles and smoke detectors to surveillance systems and satellites - that rely on electronic light sensors. Integrated into a digital camera lens, for example, it could reduce bulkiness and boost both the acquisition speed and quality of video or still photos.

The most flexible phototransistor

Developed by UW-Madison collaborators Zhenqiang Ma, professor of electrical and computer engineering, and research scientist Jung-Hun Seo, the high-performance phototransistor far and away exceeds all previous flexible phototransistor parameters, including sensitivity and response time.

One important aspect of the success of the new phototransistors is the researchers' innovative “flip-transfer” fabrication method, in which their final step is to invert the finished phototransistor onto a plastic substrate. At that point, a reflective metal layer is on the bottom. “In this structure - unlike other photodetectors - light absorption in an ultrathin silicon layer can be much more efficient because light is not blocked by any metal layers or other materials,” Ma says.

Read more at UW-Madison

Image Credit: UW-Madison

-jk-