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Current issue

ELEKTRO 10/2016 was released on September 27th 2016. Its digital version will be available on October 27th 2016.


Topic: 22nd International trade fair ELO SYS 2016; Electrical Power Engineering; RES; Emergency Power Units


Main Article

Power system management under utilization of Smart Grid system

Printed edition of SVĚTLO (Light) 5/2016 was released on September 19th 2016. Its digital version will be available immediately.


Standards, regulations and recommendations

Regulation No 10/2016 (Prague building code) from the view of building lighting technology


Lighting installations

PROLICHT CZECH – supplier of lighting for new SAP offices

Hold up the light to see in work your work

Modern and saving LED lifting of swimming pool hall

Researchers Develop Fastest and Most Flexible Silicon Phototransistor Ever

06.11.2015 | UW-Madison | news.wisc.edu

Inspired by mammals' eyes, University of Wisconsin-Madison electrical engineers have created the fastest, most responsive flexible silicon phototransistor ever made.

The innovative phototransistor could improve the performance of myriad products - ranging from digital cameras, night-vision goggles and smoke detectors to surveillance systems and satellites - that rely on electronic light sensors. Integrated into a digital camera lens, for example, it could reduce bulkiness and boost both the acquisition speed and quality of video or still photos.

The most flexible phototransistor

Developed by UW-Madison collaborators Zhenqiang Ma, professor of electrical and computer engineering, and research scientist Jung-Hun Seo, the high-performance phototransistor far and away exceeds all previous flexible phototransistor parameters, including sensitivity and response time.

One important aspect of the success of the new phototransistors is the researchers' innovative “flip-transfer” fabrication method, in which their final step is to invert the finished phototransistor onto a plastic substrate. At that point, a reflective metal layer is on the bottom. “In this structure - unlike other photodetectors - light absorption in an ultrathin silicon layer can be much more efficient because light is not blocked by any metal layers or other materials,” Ma says.

Read more at UW-Madison

Image Credit: UW-Madison